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Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
2021
František Hájek
Alice Hospodková
Pavel Hubik
Zuzana Gedeonová
Tomáš Hubáček
Jiri Pangrac
Karla Kuldová
Keywords:
algan gan
Optoelectronics
Dislocation
High-electron-mobility transistor
Materials science
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