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Fumiaki Mori

Meijo University

6

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143

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Internal quantum efficiency of GaN/AlGaN‐based multi quantum wells on different dislocation densities underlying layers

2010 Physica Status Solidi (c)
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High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer

2009 Physica Status Solidi (a)
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Novel UV devices on high-quality AlGaN using grooved underlying layer

2009 Journal of Crystal Growth
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Optimization of underlying layer and the device structure for group‐III‐nitride‐based UV emitters on sapphire

2008 Physica Status Solidi (c)
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