Optimization of underlying layer and the device structure for group‐III‐nitride‐based UV emitters on sapphire

Epitaxial lateral overgrowth (ELO) was applied for the growth of AlGaN on a sapphire substrate by metalorganic vapor phase epitaxy. Among several processes, the ELO of AlGaN on grooved AlGaN showed the best surface morphology and the lowest dark-spot density of 1×108 cm–2 as measured using cathodoluminescence. The light output power of a UV LED fabricated on ELO-Al0.25Ga0.75N on grooved Al0.25Ga0.75N was the strongest among several UV LEDs fabricated by different processes. The effect of the Al composition in the electron-blocking (EB) layer on the performance of UV LEDs was investigated. The UV LED with a low-Al-content EB layer showed high output power under a low-injection condition, while the output power of a UV LED with a high-Al-content EB layer did not saturate even under a high-injection condition. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)