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R. Mitsuhashi

Panasonic

6

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45

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Gate Leakage Advantage of LaO Incorporation for V t Tuning in High-k nMOSFETs over Metal Gate WF Control

2009 The Japan Society of Applied Physics
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45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

2005 Microelectronic Engineering
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Comparison of thermal and plasma oxidations for HfO2/Si interface

2003 Applied Surface Science
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