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Yoshiaki Fukumitsu

TDK

3

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8

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Switching Characteristics of β-Ga 2 O 3 Schottky Barrier Diodes

2018 The Japan Society of Applied Physics
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Fast Recovery Performance of β-Ga 2 O 3 Trench MOS Schottky Barrier Diodes

2018 DRC | Device Research Conference
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A voltage controlled oscillator and tuning it

1997
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