Fast Recovery Performance of β-Ga 2 O 3 Trench MOS Schottky Barrier Diodes

Gallium oxide (Ga 2 O 3 ) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $\sim 8\ \mathrm{MV}/\mathrm{cm}$ and Baliga's FOM of $\sim 3400$ . Among several polytypes of Ga 2 O 3 , β-Ga 2 O 3 is the most viable option that can provide cost-effective and high-quality wafers with an edge-defined film-fed growth (EFG) method [1]. Several groups have reported excellent electric characteristics of vertical-type power devices using the β-Ga 2 O 3 wafers [2]–[4]. We also demonstrated Schottky barrier diodes (SBDs) [5], trench metal-oxide-semiconductor SBDs (MOSSBDs) [6], junction barrier Schottky diodes [7], and trench metal-oxide-semiconductor field-effect transistors (MOSFETs) [8].