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Dmitry V. Shestovski
Dmitry V. Shestovski
Materials science
Nitrogen
Gate dielectric
Ion implantation
Power MOSFET
2
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Electroluminescence of SiO2 films grown on Si by thermal oxidation and plasma-enhanced chemical vapor deposition
2021
I. A. Romanov
N. S. Kovalchuk
Liudmila Vlasukova
Irina N. Parkhomenko
Vitali A. Saladukha
Uladzimir A. Pilipenka
Dmitry V. Shestovski
Sergey A. Demidovich
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Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs
2020
Vladimir B. Odzaev
Anatoli K. Panfilenka
Aliaksandr N. Pyatlitski
Uladislau S. Prasalovich
Natalya S. Kovalchuk
Yaroslav A. Soloviev
Viktar A. Filipenia
Dmitry V. Shestovski
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