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Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs
Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs
2020
Vladimir B. Odzaev
Anatoli K. Panfilenka
Aliaksandr N. Pyatlitski
Uladislau S. Prasalovich
Natalya S. Kovalchuk
Yaroslav A. Soloviev
Viktar A. Filipenia
Dmitry V. Shestovski
Keywords:
Nitrogen
Gate dielectric
Ion implantation
Power MOSFET
Optoelectronics
Materials science
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