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E. Al Alam
E. Al Alam
University of Toulouse
Plasma-enhanced chemical vapor deposition
Epitaxy
Capacitor
Analytical chemistry
Gallium nitride
3
Papers
32
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Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
2011
Journal of Applied Physics
E. Al Alam
I. Cortes
Marie-Paule Besland
A. Goullet
L. Lajaunie
Philippe Regreny
Y. Cordier
J. Brault
A. Cazarré
K. Isoird
G. Sarrabayrouse
F. Morancho
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Citations (30)
Comparison of GaN-based MOS structures with different interfacial layer treatments
2010
ICM | International Conference on Microelectronics
E. Al Alam
I. Cortes
Marie-Paule Besland
Philippe Regreny
A. Goullet
F. Morancho
A. Cazarré
Y. Cordier
K. Isoird
F. Olivié
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Analysis of the C-V characteristic in SiO 2 /GaN MOS capacitors
2009
CDE | Spanish Conference on Electron Devices
I. Cortes
E. Al Alam
Marie-Paule Besland
Philippe Regreny
F. Morancho
A. Cazarré
Y. Cordier
A. Goullet
K. Isoird
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Citations (1)
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