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G. Sarrabayrouse
G. Sarrabayrouse
University of Toulouse
Physics
Plasma-enhanced chemical vapor deposition
Annealing (metallurgy)
Wide-bandgap semiconductor
Epitaxy
2
Papers
33
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Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
2011
Journal of Applied Physics
E. Al Alam
I. Cortes
Marie-Paule Besland
A. Goullet
L. Lajaunie
Philippe Regreny
Y. Cordier
J. Brault
A. Cazarré
K. Isoird
G. Sarrabayrouse
F. Morancho
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Citations (30)
Optical amplification studies in Si nanocrystals-based waveguides prepared by ion-beam synthesis
2009
Physica E-low-dimensional Systems & Nanostructures
Y. Lebour
D. Navarro-Urrios
P. Pellegrino
G. Sarrabayrouse
L. Pavesi
B. Garrido
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Citations (3)
1