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A. V. Subashiev
A. V. Subashiev
Stanford University
Electron
Doping
Atomic physics
Surface photovoltage
Materials science
5
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40
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COMPARISON OF ALINGAAS/GAAS SUPERLATTICE PHOTOCATHODES HAVING LOW CONDUCTION BAND OFFSET
2007
K. Ioakeimidi
T. Maruyama
J.E. Clendenin
A. Brachmann
E. L. Garwin
R.E. Kirby
Charles Y. Prescott
D. Vasilyev
Yu. A. Mamaev
L. G. Gerchikov
A. V. Subashiev
Yu. P. Yashin
R. Prepost
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Photovoltage effects in photoemission from thin GaAs layers
2001
Physics Letters A
G. Mulhollan
A. V. Subashiev
J.E. Clendenin
E. L. Garwin
R.E. Kirby
T. Maruyama
R. Prepost
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Investigations of the charge limit phenomenon in GaAs photocathodes
2001
T. Maruyama
J.E. Clendenin
E. L. Garwin
R.E. Kirby
G. Mulhollan
R. Prepost
Charles Y. Prescott
A. V. Subashiev
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Photovoltage Effects in Photoemission from Thin GaAs Layers
2001
arXiv: Materials Science
G. Mulhollan
A. V. Subashiev
J.E. Clendenin
E. L. Garwin
R.E. Kirby
T. Maruyama
R. Prepost
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Energy resolved spin-polarised electron photoemission from strained GaAs/GaAsP heterostructure
2000
Solid State Communications
Yu. A. Mamaev
A. V. Subashiev
Yu. P. Yashin
Henri-Jean Drouhin
G. Lampel
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Citations (15)
1