Photovoltage Effects in Photoemission from Thin GaAs Layers
2001
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI