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Kang-Cheng Lin
Kang-Cheng Lin
TSMC
Dielectric
Electronic engineering
Trapping
Quantum tunnelling
Molybdenum compounds
4
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14
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Observation of Reliability of HfZrOX Gate Dielectric Devices with Different Zr/Hf Ratios
2008
Japanese Journal of Applied Physics
Jing-Chyi Liao
Yean-Kuen Fang
Yong-Tian Hou
Wei-Hsiung Tseng
Chih I. Yang
Peng-Fu Hsu
Yuen Shun Chao
Kang-Cheng Lin
Kuo-Tai Huang
Tzu Liang Lee
Meng Sung Liang
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Citations (6)
BTI and Electron Trapping in Hf-based Dielectrics with Dual Metal Gates
2007
IRPS | International Reliability Physics Symposium
Y. T. Hou
J.C. Liao
Peng-Fu Hsu
C. L. Hung
Kang-Cheng Lin
Kwo-Shu Huang
Tze-Liang Lee
Y. K. Fang
Mong-Song Liang
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BTI Reliability of Dual Metal Gate CMOSFETs with Hf-based High-k Gate Dielectrics
2007
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
J. C. Liao
Yean-Kuen Fang
Yong-Tian Hou
C. L. Hung
Peng-Fu Hsu
Kang-Cheng Lin
Kuo-Tai Huang
Tze-Liang Lee
Mong-Song Liang
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Citations (2)
Evaluation and Numerical Simulation of Optimal Structural Designs for Reliable Packaging of Ultra Low K Process Technology
2006
IITC | International Interconnect Technology Conference
Tai-Chun Huang
Chih-tang Peng
Chih-Tsung Yao
Cheng-Lin Huang
S.Y. Li
M.S. Liang
Y.C. Wang
Wen-Kai Wan
Kang-Cheng Lin
Chin-Chiu Hsia
Mong-Song Liang
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Citations (6)
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