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Peter K. McLarty

North Carolina State University

36

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Noise Analysis of MOSFET's with Ultra Thin Silicon Oxinitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition (LPRTCVD)

2010 DRC | Device Research Conference
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Modeled tunnel currents for high dielectric constant dielectrics

1998 IEEE Transactions on Electron Devices
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Analysis of gate dielectrics for SiC power UMOSFETS

1997 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

1997 Solid-state Electronics
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Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

1996 IEEE Transactions on Electron Devices
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Deep level transient spectroscopy (DLTS)

1996
- Peter K. McLarty
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Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs

1996 IEEE Transactions on Electron Devices
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fer Cluster Tool Perfo he Effects of Redu er

1996
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ectrieal Properties of Composite Gate s Formed by Rapid Thermal Processing

1996 IEEE Transactions on Electron Devices
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Electrical properties of composite gate oxides formed by rapid thermal processing

1996 IEEE Transactions on Electron Devices
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