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L. Harm
L. Harm
NXP Semiconductors
Optoelectronics
Power-added efficiency
algan gan
Amplifier
Gallium nitride
2
Papers
15
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Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
2010
Physica Status Solidi (c)
P. Waltereit
W. Bronner
R. Quay
M. Dammann
S. Müller
K. Köhler
M. Mikulla
O. Ambacher
L. Harm
Martino Lorenzini
Thomas Rödle
K. Riepe
K. Bellmann
C. Buchheim
R. Goldhahn
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Citations (6)
Efficient AlGaN/GaN HEMT Power Amplifiers
2008
EMICC | European Microwave Integrated Circuit Conference
R. Quay
F. van Raay
Jutta Kuhn
R. Kiefer
P. Waltereit
M. Zorcic
M. Musser
W. Bronner
M. Dammann
M. Seelmann-Eggebert
M. Schlechtweg
M. Mikulla
O. Ambacher
J. Thorpe
K. Riepe
F. van Rijs
M. Saad
L. Harm
Thomas Rödle
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Citations (9)
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