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An De Keersgieter

Katholieke Universiteit Leuven

6

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Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier

2018 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension

2013 IWJT | International Workshop on Junction Technology
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Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs

2006 ESSDERC | European Solid-State Device Research Conference
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Implantation and Diffusion Modelling of Boron in Silicon

1987 ESSDERC | European Solid-State Device Research Conference
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