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N. Ramkumar
N. Ramkumar
Anil Neerukonda Institute of Technology and Sciences
Optoelectronics
Materials science
Breakdown voltage
Passivation
High-electron-mobility transistor
3
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6
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Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
2021
Materials Science and Engineering B-advanced Functional Solid-state Materials
P. Murugapandiyan
D. Nirmal
Md. Tanvir Hasan
Arathy Varghese
J. Ajayan
A.S. Augustine Fletcher
N. Ramkumar
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Investigation of Influence of SiN and SiO 2 Passivation in Gate Field Plate Double Heterojunction Al 0.3 Ga 0.7 N/GaN/Al 0.04 Ga 0.96 N High Electron Mobility Transistors
2021
Silicon
P. Murugapandiyan
D. Nirmal
J. Ajayan
Arathy Varghese
N. Ramkumar
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Citations (3)
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