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P. Murugapandiyan

Anil Neerukonda Institute of Technology and Sciences

9

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18

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Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

2021 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Investigation of Influence of SiN and SiO 2 Passivation in Gate Field Plate Double Heterojunction Al 0.3 Ga 0.7 N/GaN/Al 0.04 Ga 0.96 N High Electron Mobility Transistors

2021 Silicon
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Design and development of cross dipole antenna for satellite applications

2020 Frequenz
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Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

2019 Journal of Electronic Materials
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