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Rudolf Brüggemann
Rudolf Brüggemann
Université Paris-Saclay
Photoluminescence
Spontaneous emission
Crystalline silicon
Silicon
Optoelectronics
5
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Determination of the Defect Density in Thin (i) a‐Si:H Used as Passivation Layer in a‐Si:H/c‐Si Heterojunction Solar Cells from Static Planar Conductance Measurements
2019
Physica Status Solidi-rapid Research Letters
Alexandra Levtchenko
Sylvain Le Gall
Rudolf Brüggemann
Jean-Paul Kleider
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Modulated photocurrent and photoluminescence for the characterization of silicon heterojunctions: experiments and simulation
2018
Alexandra Levtchenko
Rudolf Brüggemann
Hrachya Kyureghian
Alexandre Jaffré
Aurore Brézard-Oudot
Sylvain Le Gall
Zakaria Djebbour
Jean-Paul Kleider
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Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements
2017
Energy Procedia
Rudolf Brüggemann
Ming Xu
Jose Alvarez
Mohamed Boutchich
Jean-Paul Kleider
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Application de la technique de photocourant modulé (MPC) aux cellules à hétérojonctions c-Si / a-Si:H
2017
Alexandra Levtchenko
Raphaël Lachaume
Rudolf Brüggemann
Hrachya Kyureghian
Alexandre Jaffré
Aurore Brézard-Oudot
Sylvain Le Gall
Zakaria Djebbour
Jean-Paul Kleider
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Photoluminescence of microcrystalline silicon at low temperatures
2016
Physica Status Solidi (a)
Sven Burdorf
Rudolf Brüggemann
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