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Christopher Matthews
Christopher Matthews
Georgia Institute of Technology
Optoelectronics
Doping
Tunnel junction
Chemical vapor deposition
Molecular beam epitaxy
5
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45
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Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices
2020
Journal of Applied Physics
Habib Ahmad
Travis J. Anderson
James C. Gallagher
Evan A. Clinton
Zachary Engel
Christopher Matthews
W. Alan Doolittle
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Citations (7)
Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces
2020
Communications in Physics
Zhe Cheng
Yee Rui Koh
Habib Ahmad
Renjiu Hu
Jingjing Shi
Michael E. Liao
Yekan Wang
Tingyu Bai
Ruiyang Li
Eungkyu Lee
Evan A. Clinton
Christopher Matthews
Zachary Engel
Luke Yates
Tengfei Luo
Mark S. Goorsky
W. Alan Doolittle
Zhiting Tian
Patrick E. Hopkins
Samuel Graham
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Citations (22)
Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)]
2020
Journal of Applied Physics
Habib Ahmad
Travis J. Anderson
James C. Gallagher
Evan A. Clinton
Zachary Engel
Christopher Matthews
W. Alan Doolittle
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InGaN solar cells with regrown GaN homojunction tunnel contacts
2018
Applied Physics Express
Ehsan Vadiee
Evan A. Clinton
Heather McFavilen
Alex S. Weidenbach
Zachary Engel
Christopher Matthews
Chaomin Zhang
Chantal Arena
Richard R. King
Christiana Honsberg
W. Alan Doolittle
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Citations (16)
InGaN based solar cells with GaN tunnel junction contacts
2018
PEC | World Conference on Photovoltaic Energy Conversion
Ehsan Vadiee
Evan A. Clinton
Heather McFavilen
Zachary Engel
Christopher Matthews
Chantal Arena
Christiana Honsberg
Stephen M. Goodnick
W. A. Doolittle
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