InGaN based solar cells with GaN tunnel junction contacts

InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-assisted molecular beam epitaxy. Different solar cells with different TJ contacts were demonstrated by this method. The best solar cell featuring TJ exhibits a low leakage current density of 7.5×10 –9 mA/cm2, an open-circuit voltage (VOC) of ~2.2 V, and short circuit-current density (JSC) of ~0.9 mA/cm 2 . Correlations are made between different characterization methods to draw conclusions about the behavior of the devices.