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Ayman Shibib
Ayman Shibib
Engineering
Electrical engineering
Electronic engineering
MOSFET
Power semiconductor device
5
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37
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Understanding the threshold voltage instability during off-state stress in p-GaN HEMTs
2019
IEEE Electron Device Letters
Loizos Efthymiou
Karthick Murukesan
Giorgia Longobardi
Florin Udrea
Ayman Shibib
Kyle Terrill
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Citations (22)
A New 200 V Dual Trench MOSFET With Stepped Oxide for Ultra Low RDS(on)
2019
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Chanho Park
Misbah Ul Azam
Gabriel Dengel
Ayman Shibib
Kyle Terrill
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ISPSD: 30 Year journey in advancing power semiconductor technology
2018
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Ayman Shibib
Leo Lorenz
Hiromichi Ohashi
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Effect of device layout on the switching of enhancement mode GaN HEMTs
2018
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Loizos Efthymiou
Gianluca Camuso
Giorgia Longobardi
Florin Udrea
Terry Chien
Max Chen
Ayman Shibib
Kyle Terrill
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60 V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit
2016
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Chanho Park
Sanjay Havanur
Ayman Shibib
Kyle Terrill
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Citations (9)
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