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Terry Chien
Terry Chien
Wide-bandgap semiconductor
Electronic engineering
Engineering
Gallium nitride
Optoelectronics
4
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87
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Effect of device layout on the switching of enhancement mode GaN HEMTs
2018
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Loizos Efthymiou
Gianluca Camuso
Giorgia Longobardi
Florin Udrea
Terry Chien
Max Chen
Ayman Shibib
Kyle Terrill
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On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs
2017
Energies
Loizos Efthymiou
Gianluca Camuso
Giorgia Longobardi
Terry Chien
Max Chen
Florin Udrea
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On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
2017
Applied Physics Letters
Loizos Efthymiou
Giorgia Longobardi
Gianluca Camuso
Terry Chien
Max Chen
Florin Udrea
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Citations (53)
Zero reverse recovery in SiC and GaN Schottky diodes: A comparison
2016
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Loizos Efthymiou
Gianluca Camuso Giorgia Longobardi
Florin Udrea
Evelyn Lin
Terry Chien
Max Chen
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Citations (20)
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