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S. De-Gendt
S. De-Gendt
IMEC
Materials science
Analytical chemistry
Silicon
Oxide
Dielectric
4
Papers
49
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VO2, a Metal-Insulator Transition Material for Nanoelectronic Applications
2012
K. Martens
Iuliana Radu
Geert Rampelberg
Jeroen Verbruggen
Stefan Cosemans
S. Mertens
Xiaoping Shi
M. Schaekers
Cedric Huyghebaert
S. De-Gendt
Christophe Detavernier
Marc Heyns
Jorge Kittl
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Citations (5)
Passivation Challenges with Ge and III/V Devices
2012
Sonja Sioncke
Dennis Lin
Laura Nyns
Annelies Delabie
Aaron Thean
Naoto Horiguchi
Herbert Struyf
S. De-Gendt
Matty Caymax
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Citations (5)
Impact of Epi-Si growth temperature on Ge-pFET performance
2009
ESSDERC | European Solid-State Device Research Conference
Jerome Mitard
K. Martens
B. DeJaeger
Jacopo Franco
C. Shea
C. Plourde
F. Leys
Roger Loo
Geert Hellings
Geert Eneman
Wei-E Wang
J.C. Lin
Ben Kaczer
K. DeMeyer
T. Hoffmann
S. De-Gendt
Matty Caymax
M. Meuris
Marc Heyns
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Citations (22)
Evaluation of Time‐of‐Flight Secondary Ion Mass Spectrometry for Metal Contamination Monitoring on Si Wafer Surfaces
2000
Journal of The Electrochemical Society
H De Witte
S. De-Gendt
Monte A. Douglas
Thierry Conard
Karine Kenis
Paul Mertens
Wilfried Vandervorst
Renaat Gijbels
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Citations (17)
1