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W. S. Ahn
W. S. Ahn
Samsung
Non-volatile memory
Capacitor
Ferroelectricity
Electronic engineering
Analytical chemistry
3
Papers
9
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0
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An endurance-free ferroelectric random access memory as a non-volatile RAM
2008
VLSIT | Symposium on VLSI Technology
Dong-Jin Jung
W. S. Ahn
Y. K. Hong
Hyuk Kim
Y. M. Kang
J. Y. Kang
E.-S. Lee
Hyoung-soo Ko
S. Y. Kim
W. W. Jung
Jung-hyeon Kim
Sung-Wook Kang
J. Y. Jung
Hyun-Su Kim
D. Y. Choi
Suyoun Lee
K. H. A. Wei
C. Wei
H.S. Jeong
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Citations (5)
Key Integration Technologies for Nanoscale FRAMs
2007
ISAF | International Symposium on Applications of Ferroelectrics
Dong-Jin Jung
Y. K. Hong
Hyuk Kim
J. H. Park
Hyun-Su Kim
S. K. Kang
Jung-hyeon Kim
W. S. Ahn
D. Y. Choi
J. Y. Jung
W. W. Jung
E.-S. Lee
H.K. Goh
S. Y. Kim
J. Y. Kang
Y. M. Kang
Suk-ho Joo
Suyoun Lee
H.S. Jeong
Kinam Kim
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Citations (3)
A Novel Encapsulation Technology for Mass-Productive 150 nm, 64-Mb, 1T1C FRAM
2007
ISAF | International Symposium on Applications of Ferroelectrics
H. K. Ko
Dong-Jin Jung
Y. K. Hong
J. H. Park
Y. M. Kang
Hyuk Kim
S. K. Kang
Hyun-Su Kim
J. Y. Jung
D. Y. Choi
S. Y. Kim
W. S. Ahn
Jung-hyeon Kim
W. W. Jung
E.-S. Lee
J. Y. Kang
Suyoun Lee
H.S. Jeong
Kinam Kim
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