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C. Wei
C. Wei
Samsung
Non-volatile memory
Electronic engineering
Electrical engineering
Capacitor
Ferroelectricity
3
Papers
43
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MLC PRAM with SLC write-speed and robust read scheme
2010
VLSIT | Symposium on VLSI Technology
Young-Nam Hwang
C.Y. Um
J.H. Lee
C. Wei
H.R. Oh
Gi-Tae Jeong
H.S. Jeong
C.H. Kim
Chilhee Chung
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A methodology to characterize device-level endurance in 1T1C (1-transistor and 1-capacitor) FRAM
2008
ISAF | International Symposium on Applications of Ferroelectrics
Wha-Seung Ahn
Dong-Jin Jung
Y. K. Hong
Hyuk Kim
Y. M. Kang
Sung-Wook Kang
Hyun-Su Kim
Jung-hyeon Kim
W. W. Jung
J. Y. Jung
Hyoung-soo Ko
D. Y. Choi
S. Y. Kim
E.-S. Lee
J. Y. Kang
C. Wei
Suyoun Lee
H. S. Jung
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An endurance-free ferroelectric random access memory as a non-volatile RAM
2008
VLSIT | Symposium on VLSI Technology
Dong-Jin Jung
W. S. Ahn
Y. K. Hong
Hyuk Kim
Y. M. Kang
J. Y. Kang
E.-S. Lee
Hyoung-soo Ko
S. Y. Kim
W. W. Jung
Jung-hyeon Kim
Sung-Wook Kang
J. Y. Jung
Hyun-Su Kim
D. Y. Choi
Suyoun Lee
K. H. A. Wei
C. Wei
H.S. Jeong
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Citations (5)
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