Old Web
English
Sign In
Acemap
>
authorDetail
>
Minoru Ootuka
Minoru Ootuka
Optoelectronics
Electron mobility
Electronic engineering
Stack (abstract data type)
Metal
3
Papers
12
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Systematic Study of V th controllability using ALD-Y 2 O 3 , La 2 O 3 , and MgO 2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices
2008
IEDM | International Electron Devices Meeting
Satoshi Kamiyama
Dai Ishikawa
Etsuo Kurosawa
Hiroyuki Nakata
Masashi Kitajima
Minoru Ootuka
Takayuki Aoyama
Yasuo Nara
Yuzuru Ohji
Show All
Source
Cite
Save
Citations (6)
Band Edge Gate First HfSiON/Metal Gate n-MOSFETs using ALD-La 2 O 3 Cap Layers Scalable to EOT=0.68 nm for hp 32 nm Bulk Devices with High Performance and Reliability
2007
IEDM | International Electron Devices Meeting
Satoshi Kamiyama
Takayoshi Miura
Etsuo Kurosawa
Masashi Kitajima
Minoru Ootuka
Takayuki Aoyama
Yasuo Nara
Show All
Source
Cite
Save
Citations (6)
BandEdgeGateFirst HfSiON/Metal Gaten-MOSFETsusing ALD-La2O3 CapLayers Scalable toEOT=0.68 nmforhp32nmBulkDevices withHighPerformance andReliability
2007
Satoshi Kamiyama
Takayoshi Miura
Etsuo Kurosawa
Masashi Kitajima
Minoru Ootuka
Show All
Source
Cite
Save
Citations (0)
1