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Yun-Yan Chung

National Chiao Tung University

8

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19

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High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts

2021 IEEE Electron Device Letters
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Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

2019 IEEE Electron Device Letters
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Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS₂ Channel Directly Grown on SiOₓ/Si Substrates Using Area-Selective CVD Technology

2019 IEEE Transactions on Electron Devices
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Demonstration of HfO 2 -Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

2019 IEEE Electron Device Letters
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First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate

2019 VLSIT | Symposium on VLSI Technology
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Citations (11)