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Sheng-Kai Su

TSMC

4

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Layered Semiconducting 2D Materials for Future Transistor Applications

2021
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Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors

2020 SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
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Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS₂ Channel Directly Grown on SiOₓ/Si Substrates Using Area-Selective CVD Technology

2019 IEEE Transactions on Electron Devices
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