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Pierre Fazan

Katholieke Universiteit Leuven

5

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Low-frequency noise assessment of the oxide trap density in thick-oxide input-output transistors for DRAM applications

2016 ECS Journal of Solid State Science and Technology
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Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications

2016 Materials Science in Semiconductor Processing
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Low-frequency noise analysis of DRAM peripheral transistors with La cap

2014 ICSICT | IEEE International Conference on Solid-State and Integrated Circuit Technology
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