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Kazuya Hisamitsu
Kazuya Hisamitsu
Hiroshima University
Electronic engineering
MOSFET
Engineering
Communication channel
Physics
5
Papers
29
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A compact model of the pinch-off region of 100 nm MOSFETs based on the surface-potential
2005
IEICE Transactions on Electronics
Dondee Navarro
Takeshi Mizoguchi
Masami Suetake
Kazuya Hisamitsu
Hiroaki Ueno
Mitiko Miura-Mattausch
Hans Jürgen Mattausch
Shigetaka Kumashiro
T. Yamaguchi
Kyoji Yamashita
Noriaki Nakayama
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Citations (5)
Temperature-independence-point properties for 0.1 /spl mu/m-scale pocket-implant technologies and the impact on circuit design
2003
ASP-DAC | Asia and South Pacific Design Automation Conference
Kazuya Hisamitsu
Hiroaki Ueno
M. Tanaka
Daisuke Kitamaru
Mitiko Miura-Mattausch
Hans Jürgen Mattausch
Shigetaka Kumashiro
T. Yamaguchi
Kyoji Yamashita
Noriaki Nakayama
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Citations (4)
Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients( the IEEE International Conference on SISPAD '02)
2003
IEICE Transactions on Electronics
Dondee Navarro
Hiroaki Kawano
Kazuya Hisamitsu
Takatoshi Yamaoka
M. Tanaka
Hiroaki Ueno
Mitiko Miura-Mattausch
Hans Jürgen Mattausch
Shigetaka Kumashiro
T. Yamaguchi
Kyoji Yamashita
Noriaki Nakayama
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Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients
2002
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
Dondee Navarro
Kazuya Hisamitsu
T. Yamaoka
M. Tanaka
H. Kawano
Hiroaki Ueno
M. Miura-Mattausch
Hans Jürgen Mattausch
S. Kumashiro
T. Yamaguchi
Kyoji Yamashita
Noriaki Nakayama
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Citations (4)
Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length
2002
Journal of Applied Physics
S. Matsumoto
Kazuya Hisamitsu
M. Tanaka
Hiroaki Ueno
M. Miura-Mattausch
Hans Jürgen Mattausch
S. Kumashiro
T. Yamaguchi
S. Odanaka
Noriaki Nakayama
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Citations (16)
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