A compact model of the pinch-off region of 100 nm MOSFETs based on the surface-potential

We have developed a model for circuit-simulation which describes the MOSFET region from pinch-off to drain contact based on the surface potential. The model relates the surface-potential increase beyond the pinch-off point to the channel/drain junction profile by applying the Gauss law with the assumption that the lateral field is greater than the vertical one. Explicit equations for the lateral field and the pinch-off length are obtained, which take the potential increase in the drain overlap region into account. The model, as implemented into a circuit simulator, correctly reproduces measured channel conductance and overlap capacitance for 100 nm pocket-implant technologies as a function of bias condition and gate length.