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Takeshi Sonehara
Takeshi Sonehara
Toshiba
Atom probe
Platinum
Silicide
Dopant
Physics
4
Papers
38
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Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography
2012
Applied Surface Science
T. Kinno
Haruko Akutsu
Mitsuhiro Tomita
Shigeru Kawanaka
Takeshi Sonehara
Akira Hokazono
L Renaud
I Martin
R Benbalagh
B. Sallé
Shiro Takeno
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Citations (13)
Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation
2011
IEEE Transactions on Electron Devices
Takeshi Sonehara
Akira Hokazono
Haruko Akutsu
Tomokazu Sasaki
Hiroshi Uchida
Mitsuhiro Tomita
Shigeru Kawanaka
Satoshi Inaba
Y. Toyoshima
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Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS
2010
VLSIT | Symposium on VLSI Technology
Yoshifumi Nishi
Takeshi Sonehara
Akira Hokazono
Shigeru Kawanaka
Satoshi Inaba
Atsuhiro Kinoshita
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Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼
2008
IEDM | International Electron Devices Meeting
Takeshi Sonehara
Akira Hokazono
Haruko Akutsu
Tomokazu Sasaki
Hiroshi Uchida
Mitsuhiro Tomita
Hideji Tsujii
Shigeru Kawanaka
Satoshi Inaba
Y. Toyoshima
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Citations (13)
1