Old Web
English
Sign In
Acemap
>
authorDetail
>
Martin Domeij
Martin Domeij
Fairchild Semiconductor International, Inc.
Composite material
Materials science
Electronic engineering
Optoelectronics
Electrical engineering
6
Papers
18
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
2016
Materials Science Forum
Martin Domeij
Benedetto Buono
Krister Gumaelius
Fredrik Allerstam
Show All
Source
Cite
Save
Citations (1)
Stability of Current Gain in SiC BJTs
2014
Materials Science Forum
Benedetto Buono
Fredrik Allerstam
Martin Domeij
Andrei Konstantinov
Krister Gumaelius
Hrishikesh Das
Thomas Neyer
Show All
Source
Cite
Save
Citations (2)
1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
2013
Materials Science Forum
Martin Domeij
Andrei Konstantinov
Benedetto Buono
M Bast
R. Eiselé
L. Wang
A. Magnusson
Show All
Source
Cite
Save
Citations (1)
Large Area 1200 V SiC BJTs with β>100 and ρ ON 2
2012
Materials Science Forum
Martin Domeij
Andrei Konstantinov
Anders Lindgren
Carina Zaring
Krister Gumaelius
Mats Reimark
Show All
Source
Cite
Save
Citations (3)
1