1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
2013
Epoxy moulded power modules with a small footprint of 40 mm x 55 mm were fabricated with two switches, each consisting of six parallel 1200 V 50 A rated BJTs and Schottky diodes. The SiC-based power modules have very low on-resistance of 3.3 mΩ and a current gain of 80, both at room temperature. An inverter with specially designed drive circuits was constructed using the power modules and an efficiency of 98.5 % was shown for an output power of 12 kW.
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