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L. Seube
L. Seube
Materials science
Amorphous silicon
Grain growth
Electronic engineering
Crystallization
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Gate Material Properties Induced 0.25um SRAM Marginality
2002
ESSDERC | European Solid-State Device Research Conference
P. Sallagoity
O. Diop
P. Merenda
M Jugé
F. Oudin
G. Beaulieu
L. Seube
F. Gra
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