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Gate Material Properties Induced 0.25um SRAM Marginality
Gate Material Properties Induced 0.25um SRAM Marginality
2002
P. Sallagoity
O. Diop
P. Merenda
M Jugé
F. Oudin
G. Beaulieu
L. Seube
F. Gra
Keywords:
Materials science
Amorphous silicon
Grain growth
Electronic engineering
Crystallization
Static random-access memory
Material properties
Threshold voltage
Grain size
Resist
Engineering physics
random access memory
Forensic engineering
Correction
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