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V. H. Nguyen

NXP Semiconductors

6

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84

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Multi-Level Air Gap Integration for 32/22nm nodes using a Spin-on Thermal Degradable Polymer and a SiOC CVD Hard Mask

2007 IITC | International Interconnect Technology Conference
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The evolution of multi-level air gap integration towards 32 nm node interconnects

2007 Microelectronic Engineering
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Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

2007 IEEE Electron Device Letters
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Four-Terminal FinFET Device Technology

2007 ICICDT | International Conference on IC Design and Technology
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Citations (8)