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Tanizawa Motoaki
Tanizawa Motoaki
Materials science
Nitrogen
Silicon nitride
Atomic physics
Penning trap
4
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1
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0
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Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
2015
International Conference on Simulation of Semiconductor Processes and Devices
Sakai Atsushi
Eikyu Katsumi
Sonoda Kenichiro
Hisada Kenichi
Arai Koichi
Yamamoto Yoichi
Tanizawa Motoaki
Yamaguchi Yasuo
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The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride
2013
Sonoda Kenichiro
Tsukuda Eiji
Tanizawa Motoaki
Ishikawa Kiyoshi
Yamaguchi Yasuo
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Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL
2007
Takashino Hiroyuki
Okagaki Takeshi
Uchida Tetsuya
Hayashi Takashi
Tanizawa Motoaki
Tsukuda Eiji
Eikyu Katsumi
Wakahara Shoji
Ishikawa Kiyoshi
Tsuchiya Osamu
Inoue Yasuo
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Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
2006
International Conference on Simulation of Semiconductor Processes and Devices
Eikyu Katsumi
Okagaki Takeshi
Tanizawa Motoaki
Ishikawa Kiyoshi
Tsuchiya Osamu
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