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Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
2015
Sakai Atsushi
Eikyu Katsumi
Sonoda Kenichiro
Hisada Kenichi
Arai Koichi
Yamamoto Yoichi
Tanizawa Motoaki
Yamaguchi Yasuo
Keywords:
Electronic engineering
Power MOSFET
Materials science
Engineering physics
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