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Seok-Jae Chung

Samsung

6

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443

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Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

2009 Advanced Functional Materials
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Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

2008 Journal of Applied Physics
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2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

2007 IEDM | International Electron Devices Meeting
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2-stack ID-IRCross-point Structure withOxideDiodes asSwitch Elements for HighDensity Resistance RAM Applications

2007 International Electron Devices Meeting
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