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Zhe Wu
Zhe Wu
Samsung
Phase-change memory
Electronic engineering
Doping
Scalability
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3
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23
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Considerations on highly scalable and easily stackable phase change memory cell array for low-cost and high-performance applications
2014
NVMTS | Non-Volatile Memory Technology Symposium
Dae-Hwan Kang
Song Yi Kim
Sang Su Park
Sung Ho Eun
Jong Whan Ma
Jae-Hyun Park
Il Mok Park
Kyu Sul Park
Jae-Hee Oh
Zhe Wu
Jeong hee Park
Sug-Woo Jung
Ho Kyun Ahn
Young-Soo Lim
Sungrae Cho
Dong-ho Ahn
Seok-Woo Nam
Gi-Tae Jeong
Gyo-Young Jin
Eun Seung Jung
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Citations (5)
Fast and scalable memory characteristics of Ge‐doped SbTe phase change materials
2012
Physica Status Solidi B-basic Solid State Physics
Byung-ki Cheong
Suyoun Lee
Jeung-hyun Jeong
Sohee Park
Seungwu Han
Zhe Wu
Dong-ho Ahn
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Citations (15)
Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe
2012
Solid-state Electronics
Gang Zhang
Zhe Wu
Jeung-hyun Jeong
Doo-Seok Jeong
Won Jong Yoo
Byung-ki Cheong
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Citations (3)
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