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Gang Zhang
Gang Zhang
Korea Institute of Science and Technology
Doping
Phase-change memory
Cycling
Electronic engineering
Multi-level cell
2
Papers
19
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Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe
2012
Solid-state Electronics
Gang Zhang
Zhe Wu
Jeung-hyun Jeong
Doo-Seok Jeong
Won Jong Yoo
Byung-ki Cheong
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Citations (3)
Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe
2011
Applied Physics Letters
Zhe Wu
Gang Zhang
Y. J. Park
Stephen Dongmin Kang
Ho Ki Lyeo
Doo-Seok Jeong
Jeung-hyun Jeong
Kwangsoo No
Byung-ki Cheong
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Citations (16)
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