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Jin-soak Kim
Jin-soak Kim
Samsung
Electronic engineering
Physics
Oxide
Optoelectronics
Leakage (electronics)
3
Papers
5
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0
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Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application
2017
IRPS | International Reliability Physics Symposium
Guangfan Jiao
Sung-Kweon Baek
Kab-jin Nam
Sung-Il Chang
Siyeon Cho
Thomas Kauerauf
Chanho Lee
Seung Uk Han
Jin-soak Kim
Eun-ae Chung
Yoocheol Shin
Jun-Hee Lim
Yu-gyun Shin
Ki-Hyun Hwang
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Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB
2016
IEDM | International Electron Devices Meeting
Guangfan Jiao
Maria Toledano-Luque
Kab-jin Nam
Nakanishi Toshiro
Seunghun Lee
Jin-soak Kim
Thomas Kauerauf
EunAe Chung
Dong-il Bae
Geum-Jong Bae
Dong-Won Kim
Ki-Hyun Hwang
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Self-Aligned LOCOS/Trench (SALOT) combination isolation technology planarized by chemical mechanical polishing
1994
IEDM | International Electron Devices Meeting
Tai-su Park
Su Jin Ahn
J.H. Ko
C.G. Hong
Jin-soak Kim
S.T. Ahn
Myoung-Bum Lee
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