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Surajit Sutar

Katholieke Universiteit Leuven

17

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233

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Extreme scaling enabled by MX2 transistors: variability challenges (invited)

2021 SNW | IEEE Silicon Nanoelectronics Workshop
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Dual gate synthetic WS 2 MOSFETs with 120μS/μm Gm 2.7μF/cm 2 capacitance and ambipolar channel

2020 IEDM | International Electron Devices Meeting
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Sources of variability in scaled MoS 2 FETs

2020 IEDM | International Electron Devices Meeting
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Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity

2018 Nanotechnology
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2D materials: roadmap to CMOS integration

2018 IEDM | International Electron Devices Meeting
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FETs on 2-D Materials: Deconvolution of the Channel and Contact Characteristics by Four-Terminal Resistance Measurements on WSe 2 Transistors

2017 IEEE Transactions on Electron Devices
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Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures

2016 Advanced Materials Interfaces
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Top-Gated Epitaxial Bilayer MoSe 2 Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage

2015
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