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Moe Shimokawa

Meijo University

5

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Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

2021 Applied Physics Express
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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

2021 Journal of Crystal Growth
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AlGaN-based UV-B laser diode with a high optical confinement factor

2021 Applied Physics Letters
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AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 ISLC | International Semiconductor Laser Conference
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