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Kosuke Sato

Meijo University
Asahi Kasei

16

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89

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Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

2021 Applied Physics Express
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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

2021 Journal of Crystal Growth
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AlGaN-based UV-B laser diode with a high optical confinement factor

2021 Applied Physics Letters
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Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length

2021 Japanese Journal of Applied Physics
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AlGaN-based ultraviolet-B laser diode at 298 nm with threshold current density of 25 kA/cm2

2020 IPC | IEEE Photonics Conference
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Analysis of Spontaneous Sub‐Peak Emission from the Guide Layers of Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layer

2020 Physica Status Solidi (a)
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Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

2020 Applied Physics Express
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Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al 0.6 Ga 0.4 N/AlN/sapphire

2020 Applied Physics Express
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Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers

2020 Journal of Crystal Growth
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The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

2019 Japanese Journal of Applied Physics
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