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B. E. Foutz

Cornell University

33

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3129

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Electron Transport Within III-V Nitride Semiconductors

2017
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The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

2010 Journal of Materials Science: Materials in Electronics
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Steady-state and transient electron transport within bulk wurtzite zinc oxide

2010 Solid State Communications
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Electron Transport Within the III-V Nitride Semiconductors, GaN, AIN, and InA: A Monte Carlo Analysis

2007
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Potential performance of indium-nitride-based devices

2006 Applied Physics Letters
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Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

2005 Applied Physics Letters
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Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis

2003 Journal of Electronic Materials
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Polar optical phonon instability and intervalley transfer in III-V semiconductors

2001 Solid State Communications
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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2000 Journal of Applied Physics
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Mobility of electrons in bulk GaN and Al x Ga 1 − x N / GaN heterostructures

2000 Physical Review B
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Citations (133)