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H.K. Kim
H.K. Kim
Bethel University
Passivation
Plasma-enhanced chemical vapor deposition
Analytical chemistry
Nitride
Breakdown voltage
4
Papers
15
Citations
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On the Development of High Density Nitrides for MMICs
2003
Y.C. Chou
R. Lai
G. P. Li
H. Guan
R. Grundbacher
P. Nam
H.K. Kim
Y. Ra
M. Barsky
M. Biedenbender
A. Oki
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Innovative nitride passivated pseudomorphicGaAs HEMTs
2003
IEEE Electron Device Letters
Y.C. Chou
R. Lai
Guann-Pyng Li
Jun Hua
P. Nam
R. Grundbacher
H.K. Kim
Y. Ra
M. Biedenbender
E. Ahlers
M. Barsky
A.K. Oki
D.C. Streit
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Citations (12)
Novel Nitride Passivation on 0.15 Pm Pseudomorphic GaAs HEMTs Using High-Density Inductively Coupled Plasma CVD (HD-ICP-CVD)
2002
Y.C. Chou
R. Lai
G. P. Li
P. Nam
H.K. Kim
Y. Ra
R. Grundbacher
E. Alers
M. Barsky
M. Biedenbender
A. Oki
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Innovative nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)
2002
IPRM | International Conference on Indium Phosphide and Related Materials
Y.C. Chou
R. Lai
G.P. Li
P. Nam
Ron Grundbacher
M. Barsky
H.K. Kim
Y. Ra
A. Oki
D.C. Streit
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Citations (3)
1