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Shiniti Ogiso
Shiniti Ogiso
Power semiconductor device
Materials science
Electronic engineering
Optoelectronics
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Development of Formation Technique of Gate SiO2 Layer for GaN Power Transistors
2017
The Japan Society of Applied Physics
Takuya Maekawa
Shiniti Ogiso
Keisuke Arimoto
Junji Yamanaka
Tetuji Arai
Kiyokazu Nakagawa
Toshiyuki Takamatsu
Katunori Ueno
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